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| Transys Electronics LIMITED TO-92 Plastic-Encapsulated Transistors 2SA950 FEATURE Power dissipation TRANSISTOR (PNP) TO-92 1. EMITTER PCM : 0.6 W (Tamb=25) Collector current A ICM : -0.8 Collector-base voltage V(BR)CBO : -35 V Operating and storage junction temperature range Tj, Tstg: -55 to +150 2. COLLECTOR 3. BASE 123 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage VCE(sat) unless otherwise specified) Test conditions MIN -35 -30 -5 -0.1 -0.1 100 35 -0.7 V 320 TYP MAX UNIT V V V A A Ic= -1mA , IE=0 IC= -10 mA , IB=0 IE= -1Ma, IC=0 VCB= -35V, IE=0 VEB= -5V, IC=0 VCE=-1V, IC=-100mA VCE=-1V, IC= -700mA IC= -500mA, IB= -20mA VCB=-10V, IE=0 f=1MHZ VCE=-5V, IC=-10mA, Collector Output Capacitance Cob 19 pF Transition frequency fT 120 MHz CLASSIFICATION OF hFE(1) Rank Range O 100-200 Y 160-320 |
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